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Method Of Growing M-Plane Gallium Nitride Film

TECHNOLOGY OVERVIEW

A method of growing m-plane GaN on m-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD) is described. A suitable m-plane Al2O3 (10-10) is used as substrate. A growth of a planar aluminium nitride (AlN) nucleation layer is performed on the substrate with gaseous trimethylaluminium (Al(CH3)3) and ammonia (NH3) flow. After a desired growth time has elapsed, both gas sources are interrupted. After a desired recrystallization time has elapsed, a growth of a planar m-plane GaN file is performed with gaseous (Ga(CH3)3) and NH3. The proposed process discarded nitridation step and ammonia is inhibited during recrystallization. The surface morphology of m-plane (10-10) GaN has improved as captured by scanning electron microscope.

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Future of Consumer Electronics, Chemicals and Materials

Technology Readiness Level (TRL)

TRL 3

Patent Number

MY-181772-A

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Contact person for this offer:

ChM Dr. Lee Ching Shya, PhD (Dual), RTTP

Technology Transfer Manager

Email: leecs@um.edu.my

Tel: +603-7967-7351/ 013-2250151

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