TECH OFFER

Method for Producing A Non-Polar A-Plane Galllium Nitride (Gan) Thin Film on an R-Plane Sapphire Substrate

TECHNOLOGY OVERVIEW

The present invention is a method for producing a non-polar a-plane GaN thin film on an r-plane sapphire substrate using metal organic chemical vapour deposition (MOCVD) technique. Particularly, the method provides suitable growth conditions for GaN layer during MOCVD by controlling V/III ratio, reaction temperature and flow rate of reactants, but not limited thereto. It was found that such method could provide non-polar a-plane GaN thin film on r-plane sapphire substrate with reduced lattice mismatch between each layer.

Mega - Trends

Future of Consumer Electronics, Chemicals and Materials

Technology Readiness Level (TRL)

TRL 4

Patent Number

PI 2016703999

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Contact person for this offer:

ChM Dr. Lee Ching Shya, PhD (Dual), RTTP

Technology Transfer Manager

Email: leecs@um.edu.my

Tel: +603-7967-7351/ 013-2250151

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