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Method Of Growing Semipolar Gallium Nitride Film

TECHNOLOGY OVERVIEW

A method of growing semipolar GaN on m-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD) is described. A suitable m-plane Al2O3 is used as substrate. Nitridation of substrate is performed at growth temperature with gaseous H2 and NH3 flow. After a desired time has elapsed, growth of planar m-plane GaN layer on the substrate is performed with gaseous (Ga(CH3)3), H2 and NH3 flow. Semipolar m-plane GaN is grown on the substrate. The surface morphology of semipolar GaN has improved as captured by atomic force microscope and scanning electron microscope.

Mega - Trends

Future of Consumer Electronics, Chemicals and Materials

Technology Readiness Level (TRL)

TRL 3

Patent Number

UI 2017704972

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Contact person for this offer:

ChM Dr. Lee Ching Shya, PhD (Dual), RTTP

Technology Transfer Manager

Email: leecs@um.edu.my

Tel: +603-7967-7351/ 013-2250151

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