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Quantum Dot Light Emitting Diode Lighting Device and Method of Fabricating The Same


There is disclosed a quantum dot light emitting diode (QDLED) layered structure fabricated in a package to form a QDLED device characterized in that the QDLED layered structure comprises of a First Layer of transparent glass, a Second Layer of patterned indium tin oxide forming an anode, a Third Layer of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) (PEDOT:PSS) material forming a hole injection layer, a Fourth Layer of poly(N,N’-bis-4- butylphenyl-N,N’-bisphenyl) benzidine (poly TPD) forming a hole transport layer, a Fifth Layer of quantum dots active material, a Sixth Layer of 2,7-bis(diphenylphosphoryl)-9,9’-spirobi(fluorine) (SPPO13) forming an electron transport layer, a Seventh Layer of caesium fluoride (CsF) forming an electron injection layer, an Eight Layer of aluminum forming a cathode and a Ninth Layer of of encapsulation and packaging material to the QDLED device. A method to fabricate the QDLED device of the present invention is also disclosed.

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SMART Cities and SMART Infrastructure, Future of Consumer Electronics, Innovative Technologies of the Future, Healthcare, Energy and Power

Technology Readiness Level (TRL)


Patent Number

PI 2019007504

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